SnO: First Stable P-Type 2D Semiconductor Discovered
"This
breakthrough in semiconductor material could lead to much faster
computers and mobile devices such as smartphones that also run on less
power and with less heat."
University of Utah materials science and engineering associate professor
Ashutosh Tiwari holds up a substrate layered with a newly discovered 2D
material made of tin and oxygen. Tiwari and his team have discovered
this new material, tin monoxide, which allows electrical charges to move
through it much faster than common 3D material such as silicon. This
breakthrough in semiconductor material could lead to much faster
computers and mobile devices such as smartphones that also run on less
power and with less heat.
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